SIS443DNT1GE3 – VISHAY

Part Number:

SIS443DNT1GE3

Manufacturer:

VISHAY

Date Code:

21+

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 30V, 6A, 0.022Ω Rds(on), PowerPAK® SC-70

Datasheet:

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Product Details:

Overview

The SIS443DNT1GE3 is an N-Channel enhancement mode MOSFET manufactured by VISHAY. This transistor is designed for power switching applications requiring efficient operation at low voltages. It features a drain-source voltage rating of 30V and a continuous drain current of 6A. The device exhibits a low on-state resistance (Rds(on)) of 0.022Ω. It is supplied in a compact PowerPAK® SC-70 surface-mount package.

Key Features

N-Channel MOSFET Technology
30V Drain-Source Voltage (Vds)
6A Continuous Drain Current (Id)
Low On-Resistance: 0.022Ω at Vgs=10V

Applications

This MOSFET is suitable for various power management and load switching circuits. Its low on-resistance contributes to reduced power dissipation and improved efficiency in portable devices and other battery-powered systems.

DC-DC Converters
Load Switching
Power Management in Portable Devices