PJMD990N65EC_L2_00001 – PANJIT
Part Number:
PJMD990N65EC_L2_00001
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N-Channel MOSFET, 650 V, 4.7 A, 990 mOhm, TO‑252AA Package
Datasheet:
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Product Details:
Overview
The PJMD990N65EC_L2_00001 is an N-Channel enhancement mode MOSFET manufactured by PANJIT. This device features a drain-source voltage rating of 650V and a continuous drain current of 4.7A. Its typical on-state resistance is 990 mOhm. The component is supplied in a TO-252AA package, suitable for surface mount assembly.
Key Features
- N-Channel Enhancement Mode
- 650V Drain-Source Voltage (Vds)
- 4.7A Continuous Drain Current (Id)
- 990 mOhm On-State Resistance (Rds(on))
Applications
This N-Channel MOSFET is commonly utilized in power switching circuits and voltage regulation implementations. Its characteristics make it appropriate for various power electronics designs.
- Switch-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- DC-DC Converters
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