PJMD600N65E1_L2_00001 – PANJIT
Part Number:
PJMD600N65E1_L2_00001
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
COO:
Description:
650 V, 7.3 A, 600 mOhm N‑Channel MOSFET, TO‑252AA Package
Datasheet:
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Product Details:
Overview
The PJMD600N65E1_L2_00001 is a 650V N-Channel MOSFET manufactured by PANJIT. This power MOSFET is designed for switching applications requiring a drain-source voltage of up to 650 volts and a continuous drain current of 7.3 Amperes. It features a typical on-state resistance of 600 mOhms and is available in a TO-252AA package for surface mount assembly.
Key Features
- 650V Drain-Source Voltage (Vds)
- 7.3A Continuous Drain Current (Id)
- 600 mOhm On-State Resistance (Rds(on))
- N-Channel Enhancement Mode
Applications
This N-Channel MOSFET is suitable for various power electronics applications where efficient switching and voltage handling are critical. Its characteristics make it applicable in diverse electronic systems.
- Power Supplies
- Motor Control
- DC-DC Converters
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