PJMD580N60E1_L2_00001 – PANJIT

Part Number:

PJMD580N60E1_L2_00001

Manufacturer:

PANJIT

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 600 V, 8 A, 580 mOhm, TO‑252AA Package

Datasheet:

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Product Details:

Overview

The PJMD580N60E1_L2_00001 is an N-Channel enhancement mode MOSFET manufactured by PANJIT. This transistor is designed for switching applications requiring a drain-source voltage of up to 600V and a continuous drain current of 8A. It features a typical on-state resistance of 580 mOhm and is supplied in a TO-252AA package for surface mount assembly.

Key Features

N-Channel Enhancement Mode
600V Drain-Source Voltage (V_DS)
8A Continuous Drain Current (I_D)
580 mOhm On-State Resistance (R_DS(on))

Applications

This MOSFET is suitable for various power switching tasks in electronic systems. Its voltage and current ratings make it applicable in numerous industrial and consumer products.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
DC-DC Converters