MMBTA55-7-F – DIODES ZETEX
Part Number:
MMBTA55-7-F
Manufacturer:
Date Code:
1915
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
Bipolar Junction Transistor (BJT), 100 V, 300 mW
Datasheet:
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Stock Quantity: 6986
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.5 |
| 10+ | |
| 50+ | |
| 100+ |
6986 in stock
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- 6 month warranty on all stock items
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Product Details:
Overview
The MMBTA55-7-F is a PNP Bipolar Junction Transistor (BJT) manufactured by DIODES ZETEX. This transistor is designed for general purpose amplification and switching applications. It features a collector-emitter voltage rating of 100V and a power dissipation of 300mW. The component is supplied in a SOT-23 package.
Key Features
- PNP Polarity
- 100V Collector-Emitter Voltage (Vceo)
- 300mW Power Dissipation
- SOT-23 Package
Applications
This PNP transistor is suitable for various low to medium power electronic circuits. It is commonly used in applications requiring signal amplification or electronic switching. Its compact size makes it ideal for space-constrained designs.
- General Purpose Amplification
- Switching Circuits
- Driver Stages
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