MMBT3904LT1G – ONSEMI
Part Number:
MMBT3904LT1G
Manufacturer:
Date Code:
0530
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
NPN Bipolar Junction Transistor, 40 V, 0.2 A, SOT‑23‑3 Package
Datasheet:
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Stock Quantity: 2950
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.06 |
| 10+ | |
| 50+ | |
| 100+ |
2950 in stock
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Product Details:
Overview
The MMBT3904LT1G is an NPN bipolar junction transistor (BJT) manufactured by ONSEMI. This transistor is designed for general-purpose amplification and switching applications. It features a collector-emitter voltage rating of 40V and a collector current rating of 0.2A. The component is housed in a compact SOT-23-3 surface-mount package.
Key Features
- NPN Transistor Polarity
- 40V Collector-Emitter Voltage (Vceo)
- 200mA Collector Current (Ic)
- SOT-23-3 Package
Applications
This NPN transistor is commonly utilized in a variety of electronic circuits requiring signal amplification or switching functionality. Its small size and electrical characteristics make it suitable for diverse applications.
- Low-Power Amplifiers
- Switching Circuits
- Signal Processing
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