MMBTA42LT1G – ON-SEMI
Part Number:
MMBTA42LT1G
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
NPN Bipolar Junction Transistor, 300 V, 0.5 A, SOT‑23‑3
Datasheet:
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Product Details:
Overview
The MMBTA42LT1G is a high-voltage NPN bipolar junction transistor manufactured by ON Semiconductor. This device is designed for amplification and switching applications requiring a collector-emitter breakdown voltage of up to 300V and a collector current of 0.5A. It is supplied in a compact SOT-23-3 surface-mount package, suitable for high-density circuit board assemblies.
Key Features
- NPN Transistor Polarity
- Collector-Emitter Voltage (Vceo): 300V
- Collector Current (Ic): 0.5A
- Surface Mount SOT-23-3 Package
Applications
This transistor is commonly used in circuits requiring high voltage switching or amplification. Its small size and high voltage capability make it suitable for a variety of industrial and commercial electronics.
- High Voltage Amplifiers
- Switching Regulators
- LED Driver Circuits
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