MMBT3906LT1G – ONSEMI
Part Number:
MMBT3906LT1G
Manufacturer:
Date Code:
07
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
BJT PNP Transistor, 40V, 200mA, 250MHz, 300mW, SOT-23-3
Datasheet:
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Stock Quantity: 13
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.17 |
| 10+ | |
| 50+ | |
| 100+ |
13 in stock
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Product Details:
Overview
The MMBT3906LT1G is a PNP bipolar junction transistor (BJT) manufactured by ONSEMI. This transistor is designed for general purpose amplification and switching applications. It features a collector-emitter voltage of 40V, a collector current of 200mA, and a transition frequency of 250MHz. The device has a power dissipation rating of 300mW and is supplied in a small SOT-23-3 surface mount package.
Key Features
- PNP Transistor
- 40V Collector-Emitter Voltage
- 200mA Collector Current
- 250 MHz Transition Frequency
Applications
The MMBT3906LT1G transistor is suitable for use in a variety of electronic circuits requiring signal amplification or switching. Its compact size and electrical characteristics make it appropriate for diverse environments.
- Low-power amplifiers
- Switching circuits
- Signal processing
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