PNP BJT, 40 V, 200 mA, 300 MHz, 200 mW, SOT-23-3 Package
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The MMBT3906, manufactured by RECTRON, is a silicon PNP bipolar junction transistor (BJT) fabricated in a surface-mount SOT-23-3 package. This device is characterized by a collector-emitter voltage (Vceo) rating of 40V, a collector current (Ic) capability of 200mA, and a transition frequency (Ft) of 300MHz, making it suitable for medium-speed switching and amplification applications. The transistor exhibits a power dissipation (Pd) of 200mW under standard operating conditions. Its key electrical characteristics include a high current gain (hFE), typically specified at multiple collector current levels, and low saturation voltage (Vce(sat)). The SOT-23-3 package provides a compact footprint for high-density circuit board designs. The MMBT3906 is commonly employed in small signal amplification, level shifting, and driver circuits where a PNP transistor with moderate voltage and current handling capabilities is required.