MMBT2222ALT1 – ONSEMI
Part Number:
MMBT2222ALT1
Manufacturer:
Date Code:
2000
RoHS:
Non-RoHS
MSL:
1
COO:
CHINA
Description:
BJT NPN Transistor, 40V, 600mA, 300MHz, 225mW, SOT-23-3
Datasheet:
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Stock Quantity: 2032
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.03 |
| 10+ | |
| 50+ | |
| 100+ |
2032 in stock
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Product Details:
Overview
The MMBT2222ALT1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ONSEMI. This transistor is designed for amplification and switching applications. It features a collector-emitter voltage (Vceo) of 40V, a collector current (Ic) of 600mA, and a transition frequency (fT) of 300MHz. The device has a power dissipation rating of 225mW and is supplied in a SOT-23-3 surface-mount package.
Key Features
- NPN Transistor Polarity
- 40V Collector-Emitter Voltage
- 600mA Collector Current
- 300MHz Transition Frequency
Applications
This NPN transistor is commonly used in diverse electronic circuits requiring signal amplification or electronic switching. Its characteristics make it suitable for various deployments.
- Low-power amplifiers
- Switching circuits
- Signal processing
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