IRF640NPBF – INFINEON

 
Part Number:
IRF640NPBF
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

N-Channel, 200 V, 18 A, 150 mOhm MOSFET, TO‑220‑3 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IRF640NPBF is an N-Channel enhancement mode MOSFET manufactured by Infineon. This power MOSFET is designed for high-efficiency switching applications and features a voltage rating of 200V and a continuous drain current of 18A. It has a typical on-state resistance of 150 mOhm. The component is supplied in a TO-220-3 package for through-hole mounting.

Key Features

  • N-Channel MOSFET
  • 200V Drain-Source Voltage (Vds)
  • 18A Continuous Drain Current (Id)
  • 150 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is commonly used in power management circuits, motor control, and high-speed switching applications. Its characteristics make it suitable for use in various industrial and consumer electronic devices requiring efficient power conversion.

  • Switching Power Supplies
  • DC-DC Converters
  • Motor Drives
 
 
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