IRF60DM206 — Infineon Technologies

Overview

The Infineon IRF60DM206 is a 60 V N-channel StrongIRFET in the DirectFET ME can, whose metal top surface lets heat be extracted from both faces. StrongIRFET technology prioritises minimal conduction loss over switching speed: the large die behind its low on-resistance also carries substantial gate charge and capacitance. It therefore excels in low-frequency motor and battery switching, but needs a gate driver with strong peak current to avoid lingering in the lossy linear region during transitions.

Key Features

• 2.2 mΩ typical / 2.9 mΩ maximum RDS(on) at VGS = 10 V, ID = 80 A
• 130 A continuous drain current at TC = 25 °C
• VGS(th) 2.1–3.7 V; 2.7 mΩ typical with 6 V drive
• 1.3 °C/W junction-to-case thermal resistance
• 8.5 V/ns peak diode-recovery dv/dt rating
• DirectFET ME package, −55 °C to +150 °C junction

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

• BLDC inverter legs in power tools and e-bikes
• Synchronous rectifiers in 12 V and 24 V DC/DC converters
• OR-ing switches for redundant server power rails
• Discharge FETs in lithium battery packs