IRF630NPBF – INFINEON

Part Number:

IRF630NPBF

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 200 V, 9.3 A, 300 mOhm, TO‑220‑3 Package

Datasheet:

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Product Details:

Overview

The IRF630NPBF is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This power MOSFET is designed for high-voltage, high-current switching applications. It features a drain-source voltage rating of 200V and a continuous drain current of 9.3A. The IRF630NPBF is housed in a TO-220-3 package.

Key Features

N-Channel enhancement mode
200V Drain-Source Voltage (Vds)
9.3A Continuous Drain Current (Id)
300 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is suitable for various power management and switching circuits. Its characteristics make it useful in applications requiring efficient control of voltage and current. The IRF630NPBF can be implemented in a range of settings.

DC-DC converters
Motor control circuits
Power inverters