IPP129N10NF2S – INFINEON

Part Number:

IPP129N10NF2S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

Not Applicable

COO:

CHINA

Description:

100 V, 52 A, 11.6 mOhm N‑Channel MOSFET, TO‑220 Package

Datasheet:

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Product Details:

Overview

The IPP129N10NF2S is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power handling. It features a drain-source voltage rating of 100V and a continuous drain current capability of 52A. The device is housed in a TO-220 package, facilitating effective heat dissipation.

Key Features

100V Drain-Source Voltage
52A Continuous Drain Current
11.6 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode
TO-220 Package Type

Applications

This MOSFET is commonly used in circuits demanding efficient power control and switching. Its characteristics make it suitable for a variety of electronic systems where power management is critical. The TO-220 package allows for effective thermal management in these environments.

Synchronous Rectification
DC-DC Converters
Motor Control