IPP110N20N3 G – INFINEON
Part Number:
IPP110N20N3 G
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
GERMANY
Description:
200 V, 11 mOhm, 88 A MOSFET in a TO‑220 Package
Datasheet:
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Product Details:
Overview
The IPP110N20N3 G is a discrete N-channel power MOSFET manufactured by Infineon Technologies. This component is designed for high-efficiency switching applications, offering a drain-source voltage rating of 200V and a typical on-state resistance of 11 mOhm. It is capable of handling a continuous drain current of up to 88A and is supplied in a standard TO-220 package for through-hole mounting.
Key Features
- 200V Drain-Source Voltage (Vds)
- 11 mOhm On-State Resistance (Rds(on))
- 88A Continuous Drain Current (Id)
- N-Channel Enhancement Mode
Applications
This MOSFET is commonly employed in power management circuits and switching regulators where efficient power conversion is essential. Its characteristics make it suitable for various electronic systems requiring controlled switching.
- Switch-Mode Power Supplies (SMPS)
- DC-DC Converters
- Motor Control Circuits
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