IPP110N20N3GXKSA1 – INFINEON

Part Number:

IPP110N20N3GXKSA1

Manufacturer:

INFINEON

Date Code:

20+

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel MOSFET, 200 V, 88 A, TO‑220‑3 Package

Datasheet:

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Product Details:

Overview

The IPP110N20N3GXKSA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power MOSFET is designed for switching applications requiring efficient power control. It features a drain-source voltage rating of 200V and a continuous drain current capability of 88A. The component is housed in a TO-220-3 package, facilitating easy mounting and thermal management.

Key Features

N-Channel Enhancement Mode
200V Drain-Source Voltage (Vds)
88A Continuous Drain Current (Id)
TO-220-3 Package

Applications

This N-Channel MOSFET is commonly used in various power management and switching circuits. Its voltage and current ratings make it suitable for applications needing efficient power handling. The TO-220 package allows for effective heat dissipation in demanding environments.

Switch Mode Power Supplies (SMPS)
DC-DC Converters
Motor Control Circuits