IPD80R280P7 – INFINEON

Electronic Components
 
Part Number:
IPD80R280P7
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
GERMANY
 
 
Description:

N‑Channel MOSFET with ESD, 800 V, 17 A, 280 mOhm, DPAK Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPD80R280P7 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device features an 800V drain-source voltage rating and a continuous drain current of 17A. It exhibits a typical on-state resistance of 280 mOhm. The IPD80R280P7 incorporates electrostatic discharge (ESD) protection and is supplied in a DPAK (TO-252) package for surface mount assembly.

Key Features

  • 800V Drain-Source Voltage (Vds)
  • 17A Continuous Drain Current (Id)
  • 280 mOhm On-State Resistance (Rds(on))
  • Integrated ESD Protection Diode
  • DPAK (TO-252) Surface Mount Package

Applications

This MOSFET is designed for power switching applications requiring high voltage operation and efficient performance. It is suitable for use in various power electronic circuits and industrial environments.

  • Switch Mode Power Supplies (SMPS)
  • Power Factor Correction (PFC) circuits
  • High Voltage DC-DC Converters
 
 
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