N‑Channel MOSFET with ESD, 800 V, 17 A, 280 mOhm, DPAK Package
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The IPD80R280P7 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device features an 800V drain-source voltage rating and a continuous drain current of 17A. It exhibits a typical on-state resistance of 280 mOhm. The IPD80R280P7 incorporates electrostatic discharge (ESD) protection and is supplied in a DPAK (TO-252) package for surface mount assembly.
This MOSFET is designed for power switching applications requiring high voltage operation and efficient performance. It is suitable for use in various power electronic circuits and industrial environments.