IPD80R1K4CE – INFINEON

Part Number:

IPD80R1K4CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

800 V, 3.9 A, 1400 mOhm N‑Channel MOSFET, TO‑252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD80R1K4CE is an 800V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring a high blocking voltage and moderate current handling capability. It features a typical on-state resistance of 1400 mOhm and is provided in a TO-252-3 package for surface mount assembly.

Key Features

800V Drain-Source Voltage
3.9A Continuous Drain Current
1400 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in power supplies and other circuits where efficient high-voltage switching is needed. Its characteristics make it appropriate for various industrial and consumer electronics implementations.

LED Lighting
Auxiliary Power Supplies
Flyback Converters