IPD80R1K0CE – INFINEON

Part Number:

IPD80R1K0CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N‑Channel MOSFET, 800 V, 5.7 A, 950 mOhm, TO252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD80R1K0CE is an 800V N-Channel MOSFET manufactured by Infineon. This power transistor is designed for switching applications requiring a drain current of up to 5.7A and features a typical on-state resistance of 950 mOhm. It is supplied in a TO252-3 package, suitable for surface mount assembly.

Key Features

800V Drain-Source Voltage
5.7A Continuous Drain Current
950 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suited for power management circuits and high-voltage switching. Its characteristics make it suitable for use in various electronic systems.

Power Factor Correction (PFC) circuits
Flyback converters
LED lighting drivers