IPD60R650CE – INFINEON

Part Number:

IPD60R650CE

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 600 V, 9.9 A, 650 mOhm, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD60R650CE is an N-Channel power MOSFET manufactured by INFINEON. This device is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 9.9A. It features a typical on-state resistance of 650 mOhm and is supplied in a TO-252 package, suitable for surface mounting.

Key Features

N-Channel enhancement mode
600V Drain-Source Voltage (Vds)
9.9A Continuous Drain Current (Id)
650 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is commonly used in power supplies and converters where efficient high-voltage switching is required. Its characteristics make it suitable for various industrial and consumer electronics applications.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Lighting ballast applications