IPD60R600P6 – INFINEON

Part Number:

IPD60R600P6

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

GERMANY

Description:

N‑Channel MOSFET, 650 V, 18 A, 600 mOhm, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD60R600P6 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for high-voltage switching applications. It features a drain-source voltage rating of 650V and a continuous drain current capability of 18A. The device exhibits a typical on-state resistance (RDS(on)) of 600 mOhm. It is supplied in a TO-252 package for surface mount assembly.

Key Features

650V Drain-Source Voltage (VDS)
18A Continuous Drain Current (ID)
600 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode
TO-252 Package

Applications

This MOSFET is suitable for various power electronic circuits where efficient high-voltage switching is required. Its characteristics make it applicable in a range of industrial and consumer products.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Lighting applications
Motor control