IPD60R360P7S – INFINEON

Part Number:

IPD60R360P7S

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

600 V, 18 A, 360 mOhm N‑Channel MOSFET, TO‑252‑3 Package

Datasheet:

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Product Details:

Overview

The IPD60R360P7S is a 600V N-Channel MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring a voltage rating of 600 volts and a continuous drain current of 18 Amperes. It features a typical on-state resistance of 360 mOhms and is supplied in a TO-252-3 package for surface mount assembly.

Key Features

600V Drain-Source Voltage
18A Continuous Drain Current
360 mOhm On-State Resistance (RDS(on))
N-Channel Enhancement Mode
TO-252-3 Package

Applications

This MOSFET is suitable for use in various power electronic circuits where efficient switching and high voltage handling are necessary. Its characteristics make it applicable in several industrial and consumer products.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
LED Lighting
Motor Control