IPD26N06S2L-35 – INFINEON

Part Number:

IPD26N06S2L-35

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel, 55 V, 30 A, 35 mOhm MOSFET, TO‑252 Package

Datasheet:

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Product Details:

Overview

The IPD26N06S2L-35 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage rating of 55V and a continuous drain current capability of 30A. The device exhibits a typical on-state resistance (Rds(on)) of 35 mOhm and is supplied in a TO-252 package for surface mount assembly.

Key Features

N-Channel enhancement mode
VDS = 55V
ID = 30A
RDS(on) = 35 mΩ (typical)
TO-252 package

Applications

This MOSFET is commonly used in various power management and control circuits. Its characteristics make it suitable for use in systems requiring efficient switching and low power dissipation.

DC-DC converters
Motor control circuits
Power supplies