IPD25N06S4L-30 – INFINEON

Electronic Components
 
Part Number:
IPD25N06S4L-30
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
MALAYSIA
 
 
Description:

N‑Channel MOSFET, 60 V, 25 A, 30 mOhm, TO‑252 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The IPD25N06S4L-30 is an N-Channel enhancement mode MOSFET manufactured by INFINEON. This transistor is designed for switching applications requiring efficient power control. It features a drain-source voltage rating of 60V and a continuous drain current capability of 25A. The device exhibits a typical on-state resistance of 30 mOhm and is provided in a TO-252 package for surface mount assembly.

Key Features

  • N-Channel enhancement mode
  • VDS = 60V
  • ID = 25A
  • RDS(on) = 30 mOhm (typical)

Applications

This MOSFET is suitable for various power management and switching circuits. Its characteristics make it useful in environments needing efficient voltage regulation and load control.

  • DC-DC converters
  • Motor control
  • Power supplies
 
 
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