IPD25DP06LMATMA1 – INFINEON

Part Number:

IPD25DP06LMATMA1

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

P‑Channel MOSFET: -60 V, -6.5 A, 175°C, 28 W

Datasheet:

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Product Details:

Overview

The IPD25DP06LMATMA1 is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This component is designed for switching applications requiring a voltage rating of -60V and a continuous drain current of -6.5A. It features a maximum power dissipation of 28W and an operating junction temperature up to 175°C. The device is supplied in a standard PG-TSDSON-8 package.

Key Features

P-Channel Enhancement Mode
-60V Drain-Source Voltage
-6.5A Continuous Drain Current
175°C Maximum Junction Temperature

Applications

This P-Channel MOSFET is commonly used in power management circuits and load switching applications. Its characteristics make it suitable for use in various electronic systems requiring efficient and controlled power distribution.

DC-DC Conversion
Load Switching
Power Management Systems