IMW65R072M1H – INFINEON

Part Number:

IMW65R072M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

AUSTRIA

Description:

650 V, 39 A N‑Channel MOSFET, 48 mOhm at 18 V

Datasheet:

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Product Details:

Overview

The IMW65R072M1H is a 650V N-Channel MOSFET manufactured by Infineon. This power MOSFET is designed for high-efficiency switching applications, offering a drain-source on-resistance of 48 mOhm when driven with a gate-source voltage of 18V. It is capable of handling a continuous drain current of 39A. The component is supplied in a standard through-hole package.

Key Features

650V Drain-Source Voltage
39A Continuous Drain Current
48 mOhm On-Resistance (VGS = 18V)
N-Channel Enhancement Mode

Applications

This MOSFET is typically employed in power electronic circuits requiring efficient and reliable switching performance. Its voltage and current handling capabilities make it suitable for various power conversion stages. Its low on-resistance minimizes conduction losses.

Switch Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
DC-DC converters