IMW65R027M1H – INFINEON

Part Number:

IMW65R027M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

650 V, 47 A N‑Channel MOSFET, 27 mOhm at 18 V

Datasheet:

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Product Details:

Overview

The IMW65R027M1H is a 650V N-Channel MOSFET manufactured by Infineon. This power transistor is designed for switching applications, offering a low on-resistance of 27 mOhm when driven with a gate voltage of 18V. It is capable of handling a continuous drain current of 47A. The component is supplied in a standard through-hole package.

Key Features

650V Drain-Source Voltage
47A Continuous Drain Current
27 mOhm On-Resistance (VGS = 18V)
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for use in power supplies and motor control circuits. Its voltage and current handling capabilities make it a good choice for various power electronic systems. The low on-resistance contributes to reduced power dissipation and improved efficiency.

Switch-Mode Power Supplies (SMPS)
Motor Drives
DC-DC Converters