IMW65R048M1H – INFINEON

Part Number:

IMW65R048M1H

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-CH 650V 39A 48mOhm bei 18V

Datasheet:

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Product Details:

Overview

The IMW65R048M1H is a discrete N-Channel MOSFET manufactured by Infineon. This component is designed for high-voltage switching applications, offering a drain-source voltage rating of 650V. It features a low on-state resistance (Rds(on)) of 48 mOhm when the gate-source voltage is 18V, enabling efficient power management. The device is capable of handling a continuous drain current of up to 39A.

Key Features

650V Drain-Source Voltage (Vds)
48 mOhm On-State Resistance (Rds(on) @ Vgs=18V)
39A Continuous Drain Current (Id)
N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in power electronics circuits requiring efficient and reliable switching. Its high voltage and current capabilities make it suitable for various industrial and consumer applications.

Switch-Mode Power Supplies (SMPS)
Power Factor Correction (PFC) circuits
Motor control