FDG6332C – ONSEMI
Part Number:
FDG6332C
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
PHILIPPINES
Description:
N/P‑Channel MOSFET, 20 V, 0.7 A, SC‑88
Datasheet:
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Product Details:
Overview
The FDG6332C is a complementary N/P-Channel MOSFET from ONSEMI. This device is designed for low voltage switching applications, offering both an N-channel and a P-channel MOSFET within a single SC-88 surface mount package. It features a drain-source voltage rating of 20V and a continuous drain current of 0.7A, making it suitable for space-constrained designs.
Key Features
- N/P-Channel Configuration
- 20V Drain-Source Voltage (Vds)
- 0.7A Continuous Drain Current (Id)
- SC-88 Surface Mount Package
Applications
This dual MOSFET is commonly used in portable electronic devices requiring efficient power management. Its small size and complementary configuration make it ideal for applications where board space is limited and both high-side and low-side switching are needed.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
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