FDG6316P – ONSEMI

Part Number:

FDG6316P

Manufacturer:

ONSEMI

Date Code:

19+

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

12 V, 0.7 A, Dual P‑Channel MOSFET, SC88 Package

Datasheet:

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Product Details:

Overview

The FDG6316P is a dual P-Channel enhancement mode MOSFET manufactured by FSC (Fairchild Semiconductor). This device is designed for low voltage, high-side load switching applications. It features a drain-source voltage rating of 12V and a continuous drain current of 0.7A. The FDG6316P is supplied in a space-saving SC88 surface-mount package.

Key Features

Dual P-Channel MOSFET configuration
12V Drain-Source Voltage (Vds)
0.7A Continuous Drain Current (Id)
Low on-resistance (Rds(on))
SC88 Surface Mount Package

Applications

This dual P-Channel MOSFET is suitable for a variety of power management and switching functions in portable devices and other low-voltage systems. Its compact size and efficient performance make it a viable option for space-constrained designs.

Load Switching
Power Management Circuits
DC-DC Conversion