FDG6322C – ONSEMI
Part Number:
FDG6322C
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N/P-Channel MOSFET, 25 V, 0.22 A, SC-88
Datasheet:
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Product Details:
Overview
The FDG6322C is an N/P-Channel enhancement mode MOSFET manufactured by ONSEMI. This device is designed for low voltage applications requiring efficient power switching. It features a voltage rating of 25V and a continuous drain current of 0.22A. The FDG6322C is available in a compact SC-88 surface mount package, suitable for high-density circuit board designs.
Key Features
- N/P-Channel configuration
- 25V Drain-Source Voltage
- 0.22A Continuous Drain Current
- Low On-Resistance (RDS(on))
- SC-88 Package
Applications
This MOSFET is commonly employed in portable electronic devices and other applications where space is a constraint. Its low voltage operation makes it suitable for battery-powered systems and logic-level control circuits.
- Load Switching
- DC-DC Conversion
- Power Management Circuits
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