BSS225 H6327 – INFINEON

Part Number:

BSS225 H6327

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

Description:

N-Channel MOSFET, 0.09 A, 600 V, SOT‑89 Package

Datasheet:

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Product Details:

Overview

The BSS225 H6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for high-voltage switching applications, offering a drain-source voltage rating of 600V and a continuous drain current of 0.09A. It is supplied in a compact SOT-89 surface-mount package.

Key Features

N-Channel enhancement mode
600V Drain-Source Voltage (Vds)
0.09A Continuous Drain Current (Id)
Low On-Resistance (Rds(on))
SOT-89 Package

Applications

This MOSFET is commonly used in power management circuits and high-voltage switching scenarios. Its characteristics make it suitable for various electronic devices requiring efficient and reliable switching performance.

High-Voltage Power Supplies
LED Lighting Drivers
Offline Converters