BSS209PW H6327 – INFINEON

Electronic Components
 
Part Number:
BSS209PW H6327
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
AUSTRIA
 
 
Description:

P‑Channel, 20 V, 0.58 A MOSFET, SOT323 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSS209PW H6327 is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for low voltage switching applications and is housed in a compact SOT323 surface mount package. It features a drain-source voltage rating of 20V and a continuous drain current of 0.58A.

Key Features

  • P-Channel MOSFET
  • 20V Drain-Source Voltage
  • 0.58A Continuous Drain Current
  • SOT323 Package

Applications

This P-Channel MOSFET is commonly employed in portable devices and low-power circuits requiring efficient switching. Its small size makes it suitable for high-density board layouts. Typical applications include:

  • Load switching
  • Power management circuits
  • DC-DC conversion
 
 
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