BSS215P H6327 – INFINEON
Part Number:
BSS215P H6327
Manufacturer:
Date Code:
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
P‑Channel MOSFET, 20 V, 1.5 A, SOT‑23 Package
Datasheet:
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Product Details:
Overview
The BSS215P H6327 is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for low voltage, low current switching applications. It features a drain-source voltage rating of 20V and a continuous drain current of 1.5A. The component is housed in a small SOT-23 surface mount package.
Key Features
- P-Channel MOSFET
- 20V Drain-Source Voltage
- 1.5A Continuous Drain Current
- Enhancement Mode Operation
- SOT-23 Package
Applications
This P-Channel MOSFET is typically utilized in portable devices and battery-powered systems where efficient power management is crucial. Its compact size makes it suitable for high-density circuit board designs.
- Load Switching
- Power Management Circuits
- DC-DC Conversion
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