-250 V, -190 mA P‑Channel MOSFET, 12 Ohm, SOT‑89 Package
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The BSS192P H6327 is a P-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for switching and amplification applications requiring a voltage rating of -250V and a continuous drain current of -190mA. It features an on-state resistance of 12 Ohm and is supplied in a compact SOT-89 package for surface mount assembly.
This P-Channel MOSFET is suitable for various low-power switching applications where a negative voltage polarity is required. Its compact size and voltage handling capabilities make it useful in diverse electronic circuits.