BSS192P H6327 – INFINEON

Electronic Components
 
Part Number:
BSS192P H6327
 
 
Manufacturer:
 
 
Date Code:
 
 
RoHS:
RoHS Compliant
 
 
MSL:
 
 
COO:
 
 
Description:

-250 V, -190 mA P‑Channel MOSFET, 12 Ohm, SOT‑89 Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSS192P H6327 is a P-Channel enhancement mode MOSFET manufactured by Infineon. This transistor is designed for switching and amplification applications requiring a voltage rating of -250V and a continuous drain current of -190mA. It features an on-state resistance of 12 Ohm and is supplied in a compact SOT-89 package for surface mount assembly.

Key Features

  • P-Channel Enhancement Mode
  • -250V Drain-Source Voltage (Vds)
  • -0.19A Continuous Drain Current (Id)
  • 12 Ohm On-Resistance (Rds(on))

Applications

This P-Channel MOSFET is suitable for various low-power switching applications where a negative voltage polarity is required. Its compact size and voltage handling capabilities make it useful in diverse electronic circuits.

  • High-Side Load Switching
  • Solid State Relays
  • DC-DC Conversion
 
 
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