BSS138LT3G – ONSEMI

Part Number:

BSS138LT3G

Manufacturer:

ONSEMI

Date Code:

21+

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 50 V, 200 mA, SOT‑23‑3 Package

Datasheet:

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Product Details:

Overview

The BSS138LT3G is a discrete N-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for low voltage, low current switching applications. It is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained printed circuit board designs. The device features a drain-source voltage rating of 50V and a continuous drain current of 200mA.

Key Features

N-Channel Enhancement Mode
50V Drain-Source Voltage (Vds)
200mA Continuous Drain Current (Id)
SOT-23-3 Package

Applications

This MOSFET is commonly used in various switching and amplification circuits. Its small size and electrical characteristics make it suitable for portable electronics and other applications where board space is a concern. It is frequently implemented in low-side switching configurations.

Load Switching
DC-DC Conversion
Small Signal Amplification