BSS138-7-F – DIODES INCORPORATED
N-Channel MOSFET, 50V, 200mA, 1.4Ω, SOT-23-3
Stock Quantity: 1810
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.07 |
| 10+ | |
| 50+ | |
| 100+ |
1810 in stock
Contact us for volume pricing
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- 6 month warranty on all stock items
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Overview
The Diodes Incorporated BSS138-7-F is an N-channel enhancement-mode MOSFET designed for low-power switching applications. Its key operational characteristic lies in its low gate threshold voltage (Vgs th) of 500mV, enabling direct drive from low-voltage logic sources. A critical design consideration for this device is managing its continuous drain current (Id) of 200mA, as exceeding this limit, especially in conjunction with its 3.5 Ohm drain-source on-resistance (Rds On), can lead to thermal runaway due to its 300mW power dissipation. This makes it ideal for signal-level switching where power efficiency is paramount.
Key Features
- Drain-Source Breakdown Voltage (Vds): 50V
- Continuous Drain Current (Id): 200mA
- Drain-Source On-Resistance (Rds On): 3.5 Ohms
- Gate-Source Threshold Voltage (Vgs th): 500mV
- Maximum Power Dissipation (Pd): 300mW
- Package: SOT-23-3 (2.9mm x 1.3mm x 1mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-voltage logic level translation
- Digital signal switching in battery-powered devices
- Control of small loads in portable electronics
- Analog signal multiplexing in sensor interfaces
