BSS123W-7-F – DIODES INCORPORATED

Part Number:

BSS123W-7-F

Manufacturer:

DIODES INCORPORATED

Date Code:

21+

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 100 V, 170 mA, SOT‑323 Package

Datasheet:

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Product Details:

Overview

The BSS123W-7-F is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low-power switching applications, offering a drain-source voltage rating of 100V and a continuous drain current of 170mA. It is supplied in a compact SOT-323 surface-mount package, suitable for high-density circuit board layouts.

Key Features

N-Channel Enhancement Mode
100V Drain-Source Voltage (Vds)
170mA Continuous Drain Current (Id)
Low On-Resistance (Rds(on))

Applications

This MOSFET is commonly used in a variety of low-power electronic circuits where efficient switching is required. Its small size and voltage/current ratings make it suitable for portable devices and control circuits.

DC-DC Converters
Load Switching
Small Signal Amplification