BSS123LT1G – ONSEMI
Part Number:
BSS123LT1G
Manufacturer:
Date Code:
12
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
N‑Channel MOSFET, 100 V, 170 mA, SOT23‑3 Package
Datasheet:
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Stock Quantity: 2593
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.11 |
| 10+ | |
| 50+ | |
| 100+ |
2593 in stock
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Product Details:
Overview
The BSS123LT1G is an N-Channel enhancement mode MOSFET manufactured by ONSEMI. This transistor is designed for low-power switching applications requiring a drain-source voltage of up to 100V and a continuous drain current of 170mA. It is supplied in a compact SOT23-3 surface mount package, suitable for high-density circuit board designs.
Key Features
- N-Channel Enhancement Mode
- Voltage Rating: 100V VDSS
- Current Rating: 170mA ID
- Low On-Resistance
- SOT23-3 Package
Applications
This MOSFET is typically used in various low-power electronic circuits where efficient switching is needed. Its small size and voltage/current capabilities make it suitable for portable devices and control systems.
- DC-DC Conversion
- Load Switching
- Small Signal Amplification
- Relay Driving
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