BSS123-7-F – DIODES INCORPORATED

Part Number:

BSS123-7-F

Manufacturer:

DIODES INCORPORATED

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N-Channel MOSFET, 100 V, 170 mA, SOT23-3 Package

Datasheet:

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Product Details:

Overview

The BSS123-7-F is an N-Channel enhancement mode MOSFET manufactured by DIODES INCORPORATED. This transistor is designed for low power switching applications requiring a drain-source voltage of up to 100V and a continuous drain current of 170mA. It is supplied in a compact SOT23-3 surface mount package, suitable for high-density circuit board layouts.

Key Features

N-Channel Enhancement Mode
V_DS: 100V
I_D: 170mA
Package: SOT23-3

Applications

This MOSFET is commonly used in various low-power electronic circuits where efficient switching is required. Its small size and voltage/current ratings make it suitable for a range of applications.

DC-DC Conversion
Load Switching
Small Signal Amplification
Relay Driving