BSC160N10NS3 G – INFINEON

Part Number:

BSC160N10NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N-Channel MOSFET, 100 V, 42 A, 16.0 mOhm, TDSON-8 Package

Datasheet:

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Product Details:

Overview

The BSC160N10NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This power transistor is designed for switching applications requiring efficient power conversion. It features a drain-source voltage (Vds) rating of 100V and a continuous drain current (Id) of 42A. The device exhibits a typical on-state resistance (Rds(on)) of 16.0 mOhm. It is supplied in a space-saving TDSON-8 surface mount package.

Key Features

N-Channel enhancement mode
100V Drain-Source Voltage
42A Continuous Drain Current
16.0 mOhm On-State Resistance (typical)

Applications

This MOSFET is commonly used in various power management circuits and switching topologies. Its characteristics make it suitable for deployment in industrial and commercial electronic systems.

Synchronous Rectification
DC-DC Conversion
Motor Control