BSC0803LSATMA1 – INFINEON

Electronic Components
 
Part Number:
BSC0803LSATMA1
 
 
Manufacturer:
 
 
Date Code:
0803
 
 
RoHS:
RoHS Compliant
 
 
MSL:
1
 
 
COO:
GERMANY
 
 
Description:

N‑Channel MOSFET, 100 V, 44 A, PG-TDSON Package

 
 
Datasheet:
 
 
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Product Details:

Overview

The BSC0803LSATMA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring a drain-source voltage of up to 100V and a continuous drain current of 44A. It is packaged in a PG-TDSON housing, providing efficient thermal performance.

Key Features

  • N-Channel enhancement mode
  • 100V Drain-Source Voltage (Vds)
  • 44A Continuous Drain Current (Id)
  • PG-TDSON package type

Applications

This MOSFET is suitable for various power switching and control circuits. Its characteristics make it appropriate for use in systems demanding efficient power management and compact designs.

  • DC-DC converters
  • Motor control circuits
  • Power supplies
 
 
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