BSC076N06NS3 G – INFINEON

Part Number:

BSC076N06NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

N‑Channel MOSFET, 60 V, 50 A, 7.6 mOhm, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC076N06NS3 G is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current of 50A. The device exhibits a typical on-state resistance of 7.6 mOhm. It is supplied in a TDSON-8 surface mount package.

Key Features

N-Channel enhancement mode
60V Drain-Source Voltage (Vds)
50A Continuous Drain Current (Id)
7.6 mOhm On-State Resistance (Rds(on))

Applications

This MOSFET is commonly used in a variety of power electronic circuits where efficient switching is required. Its characteristics make it suitable for use in several applications.

Synchronous Rectification
DC-DC Conversion
Motor Control