BSC060N10NS3 G – INFINEON

Part Number:

BSC060N10NS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

100 V, 90 A, 6.0 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC060N10NS3 G is a discrete N-Channel MOSFET manufactured by Infineon Technologies. This component is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 100V and a continuous drain current of 90A. The device is housed in a TDSON-8 surface-mount package, optimized for thermal performance and space efficiency.

Key Features

100V Drain-Source Voltage (Vds)
90A Continuous Drain Current (Id)
6.0 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is suitable for a range of power switching and control functions. Its low on-resistance minimizes power loss in switching circuits, making it appropriate for high-efficiency designs.

Synchronous Rectification
DC-DC Conversion
Motor Control