BSC028N06LS3 G – INFINEON

Part Number:

BSC028N06LS3 G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

60 V, 100 A, 2.8 mOhm N‑Channel MOSFET, TDSON‑8 Package

Datasheet:

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Product Details:

Overview

The BSC028N06LS3 G is an N-Channel MOSFET manufactured by Infineon. This transistor is designed for switching applications requiring efficient power management. It features a drain-source voltage rating of 60V and a continuous drain current of 100A. The component is housed in a TDSON-8 package, optimized for thermal performance and compact board mounting.

Key Features

60V Drain-Source Voltage (Vds)
100A Continuous Drain Current (Id)
2.8 mOhm On-State Resistance (Rds(on))
N-Channel Enhancement Mode

Applications

This MOSFET is commonly used in power supply circuits, motor control systems, and DC-DC converters. Its low on-resistance minimizes power losses, making it suitable for high-efficiency designs. The TDSON-8 package allows for effective heat dissipation in demanding environments.

Synchronous Rectification
DC-DC Conversion
Motor Control