BSC019N04NS G – INFINEON

Part Number:

BSC019N04NS G

Manufacturer:

INFINEON

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

MALAYSIA

Description:

N‑Channel MOSFET, 40 V, 100 A, 1.6 mOhm, TDSON‑8 Package

Datasheet:

Spotted a problem with product information? – let us know

ORDER NOW

Stock Quantity: 0

GET QUOTE

Contact us for volume pricing

Same day shipping if ordered before 14.00 GMT
6 month warranty on all stock items
All stock held and shipped from our UK warehouse
Worldwide shipping available, contact us for a quotation
We can ship on your DHL or UPS account if required
Any import duties or taxes are the responsibility of the receiver

Product Details:

Overview

The BSC019N04NS G is an N-Channel enhancement mode MOSFET from Infineon Technologies. This transistor is designed for switching applications requiring efficient power control. It features a drain-source voltage rating of 40V and a continuous drain current capability of 100A. The component exhibits a low on-state resistance of 1.6 mOhm. It is supplied in a TDSON-8 surface mount package.

Key Features

N-Channel Enhancement Mode
VDS: 40V
ID: 100A
RDS(on): 1.6 mOhm

Applications

This MOSFET is suitable for various power management and switching circuits. Its low on-resistance minimizes power losses, making it ideal for high-efficiency designs. The device’s characteristics make it appropriate for use in several environments.

Synchronous Rectification
DC-DC Conversion
Motor Control