BF1105R,215 – NXP
Part Number:
BF1105R,215
Manufacturer:
Date Code:
21
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
Dual N‑Channel 7 V 200 mW RF MOSFET, SOT‑143R Package
Datasheet:
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Product Details:
Overview
The BF1105R,215 is a dual N-Channel RF MOSFET manufactured by NXP. This device operates at a drain-source voltage of 7V and provides a power dissipation of 200mW. It is designed for high-frequency applications and is supplied in a compact SOT-143R package.
Key Features
- Dual N-Channel configuration
- 7V Drain-Source Voltage (Vds)
- 200mW Power Dissipation
- High-Frequency Operation
- SOT-143R Surface Mount Package
Applications
This RF MOSFET is suitable for various radio frequency circuits and systems. Its dual configuration allows for implementation in balanced amplifier or mixer designs. The compact size is beneficial for space-constrained applications.
- Low Noise Amplifiers (LNA)
- RF Mixers
- Oscillator Circuits
- High-Frequency Switches
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