BCW69 – PHILIPS

 
Part Number:
BCW69
 
 
Manufacturer:
 
 
Date Code:
0113
 
 
RoHS:
RoHS Unknown
 
 
MSL:
1
 
 
COO:
CHINA
 
 
Description:

BJT, PNP, 45V, 100mA, 100MHz, 250mW, SMT, TO-236AB Bipolar Transistor

 
 
Datasheet:
 
 
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Product Details:

Overview

The PHILIPS BCW69 is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. Its critical operational characteristic lies in its moderate current handling capability (100 mA collector current) and a respectable 45 V collector-emitter breakdown voltage, making it suitable for low-power signal conditioning. A key design consideration when utilizing the BCW69 is managing its Vce(sat) of 150mV at 2.5mA/50mA; while acceptable for many linear circuits, designers must account for this saturation voltage in low-voltage switching designs to prevent significant voltage drops and power dissipation.

Key Features

  • Transistor Type: PNP
  • Collector Current (Ic) Max: 100 mA
  • Collector-Emitter Breakdown Voltage (Vceo) Max: 45 V
  • Vce Saturation Max @ Ib, Ic: 150mV @ 2.5mA, 50mA
  • DC Current Gain (hFE) Min @ Ic, Vce: 120 @ 2mA, 5V
  • Transition Frequency (fT): 100 MHz
  • Package: TO-236-3, SC-59, SOT-23-3 (Surface Mount)

Applications

The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.

  • Low-power audio amplification stages
  • Signal switching in battery-powered portable devices
  • Voltage level shifting in digital interfaces
  • Bias current generation for operational amplifiers
 
 
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