BCW60D – NXP

Part Number:

BCW60D

Manufacturer:

NXP

Date Code:

RoHS:

RoHS Compliant

MSL:

COO:

CHINA

Description:

NPN Bipolar Transistor, 380 hFE, 2 mA, 5 V, 20 nA, 350 mW, 125 MHz

Datasheet:

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Product Details:

Overview

The BCW60D is an NPN bipolar junction transistor (BJT) manufactured by NXP Semiconductors. This transistor is designed for amplification and switching applications, characterized by a high current gain (hFE) of 380. It operates with a collector current of 2 mA and a collector-emitter voltage of 5 V. The BCW60D is housed in a SOT-23 package.

Key Features

NPN Polarity
High DC Current Gain (hFE = 380)
Collector-Emitter Voltage (VCEO = 5V)
Low Collector Cut-off Current (20 nA)
Transition Frequency (fT = 125 MHz)

Applications

This NPN transistor is commonly used in various electronic circuits requiring signal amplification or switching. Its characteristics make it suitable for low-power and high-frequency applications in diverse electronic systems.

Audio Amplifiers
Switching Circuits
Signal Amplification