BC857A,215 – NXP
Part Number:
BC857A,215
Manufacturer:
Date Code:
06+
RoHS:
RoHS Compliant
MSL:
1
COO:
CHINA
Description:
BJT PNP Transistor 45V, 100mA, 100MHz, 250mW, TO-236AB, Surface Mount
Datasheet:
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Stock Quantity: 4558
Selling Unit: Each
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | 0.15 |
| 10+ | |
| 50+ | |
| 100+ |
4558 in stock
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Product Details:
Overview
The NXP BC857A,215 is a general-purpose PNP bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Its critical operational characteristic lies in its moderate current gain (hFE) and voltage ratings, making it suitable for signal conditioning and level shifting. A key design consideration when utilizing this SOT-23 package device is managing its 250 mW power dissipation, as exceeding this limit can lead to thermal runaway and premature component failure, especially in densely populated PCBs where heat dissipation is a challenge.
Key Features
- PNP Silicon Bipolar Junction Transistor
- Maximum DC Collector Current (Ic): 100 mA
- Collector-Emitter Voltage (VCEO): 45 V
- Power Dissipation (Pd): 250 mW
- Gain Bandwidth Product (fT): 100 MHz
- Package: SOT-23-3 (3mm x 1.4mm x 1mm)
Applications
The component is engineered for deployment in systems requiring high reliability and performance under specific operating conditions. It provides functional stability across the stated design envelope.
- Low-frequency audio amplification stages
- Signal inversion and level shifting in control logic
- Switching applications for small loads
- Bias current generation for active components
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